Method and apparatus for full surface electrotreating of a wafer
US6852208B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 3, 2002 |
| Grant date | Feb 8, 2005 |
| Priority date | — |
| Expiry date | Oct 3, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/2885
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Deposition of conductive material on or removal of conductive material from a workpiece frontal side of a semiconductor workpiece is performed by providing an anode having an anode area which is to face the workpiece frontal side, and electrically connecting the workpiece frontal side with at least one electrical contact, outside of the anode area, by pushing the electrical contact and the workpiece frontal side into proximity with each other. A potential is applied between the anode and the electrical contact, and the workpiece is moved with respect to the anode and the electrical contact. Full-face electroplating or electropolishing over the workpiece frontal side surface, in its entirety, is thus permitted.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.