Patent · US Expired

Method of manufacturing a ferroelectric capacitor configuration

US6852240B2 · kind B2 · utility

1Cited by

8References

3Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Walter Hartner · Munich, DE
Gunther Schindler · Hersbruck, DE
Volker Weinrich · Paris, FR
Igor Kasko · Mennecy, FR

Key dates

Filing date	Feb 26, 2001
Grant date	Feb 8, 2005
Priority date	—
Expiry date	Apr 11, 2021

Classification

Technology area (CPC H)Electricity
CPC primaryH10D1/696

Abstract

A ferroelectric capacitor configuration is configured with at least two different coercitive voltages. A first electrode structure having a surface which forms at least two levels is firstly produced. A layer of ferroelectric material of varying thickness is deposited over the first electrode by spin coating. A second electrode structure is subsequently formed on the layer of ferroelectric material.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.