Insitu post etch process to remove remaining photoresist and residual sidewall passivation
US6852636B1 · kind B1 · utility
6Cited by
24References
16Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Dec 27, 1999 |
| Grant date | Feb 8, 2005 |
| Priority date | — |
| Expiry date | Dec 27, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32136
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for performing a metallic etch, etch mask stripping, and removal of residual sidewall passivation in a single etch chamber. A wafer is placed in an etch chamber. A metal etch is performed on the wafer. A stripping gas, such as a mixture of oxygen and argon is provided to the etch chamber and is energized to form an oxygen plasma. The oxygen plasma strips the etch mask from the wafer and removes residual sidewall passivation. The oxygen plasma also cleans the etch chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.