Composition for cleaning chemical mechanical planarization apparatus
US6852682B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 16, 2002 |
| Grant date | Feb 8, 2005 |
| Priority date | — |
| Expiry date | Jul 25, 2023 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC11D2111/22
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present invention relates to chemical compositions and methods of use for cleaning CMP equipment, including the interiors of delivery conduits caring CMP slurry to the necessary sites. The chemical compositions of the present invention are also useful for post-CMP cleaning of the wafer itself. Three classes of cleaning compositions are described, all of which are aqueous solutions. One class operates in a preferable pH range from about 11 to about 12 and preferably contains one or more non-ionic surfactants, one or more simple amines, a surfactant or sticking agent, such as one or more soluble dialcohol organic compounds, and one or more quaternary amines. A second class of cleaning composition operates in a preferable pH range of approximately 8.5 and contains one or more of citric acid, lactic acid, and oxalic acid. A third class of compositions is acidic, having a preferable pH range from about 1.5 to about 3, preferably containing at least one oxidizing acid, at least one chelating agent, at least one sticking agent and at least one anionic surfactant. HF and KOH are substantially absent from the preferred compositions of the present invention. Some compositions of the pres…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.