BJT based ESD protection structure with improved current stability

US6853053B1 · kind B1 · utility

Assignee

• NATIONAL SEMICONDUCTOR CORPORATION · US

Inventors

• Vladislav Vashchenko · Palo Alto, US
• Ann Concannon · San Jose, US
• Peter J. Hopper · San Jose, US
• Marcel ter Beek · Pleasanton, US

Key dates

• Filing date: May 12, 2003
• Grant date: Feb 8, 2005
• Expiry date: May 12, 2023

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D89/711

Abstract

In a BJT ESD protection structure, the ESD current density is stabilized by partially blocking one or more of the emitter and n+ collector, sinker, and n-buried layer to define a comb-like structure for the partially blocked regions.