Method of depositing low dielectric constant silicon carbide layers
US6855484B2 · kind B2 · utility
2Cited by
44References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 25, 2003 |
| Grant date | Feb 15, 2005 |
| Priority date | — |
| Expiry date | Feb 25, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2221/1031
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a silicon carbide layer for use in integrated circuits is provided. The silicon carbide layer is formed by reacting a gas mixture comprising a silicon source, a carbon source, and a nitrogen source in the presence of an electric field. The as-deposited silicon carbide layer incorporates nitrogen therein from the nitrogen source.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.