Semiconductor device having ferroelectric film and manufacturing method thereof
US6855565B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Nov 14, 2003 |
| Grant date | Feb 15, 2005 |
| Priority date | — |
| Expiry date | Nov 14, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B53/00
Abstract
First and second semiconductor regions are formed separately from each other in a semiconductor substrate. A gate electrode is formed above the semiconductor substrate which lies between the first and second semiconductor regions. An interlayer insulating film is formed on the semiconductor substrate to cover the first and second semiconductor regions and the gate electrode. First and second lower electrodes are formed on the interlayer insulating film. A first contact plug is formed in the interlayer insulating film in contact with the first lower electrode. A second contact plug is formed in the interlayer insulating film in contact with the second lower electrode. A first ferroelectric film is formed on the first lower electrode. A first upper electrode is formed on the first ferroelectric film. A second ferroelectric film is formed on the second lower electrode. A second upper electrode is formed on the second ferroelectric film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.