Trench Schottky barrier diode

US6855593B2 · kind B2 · utility

Assignee

• International Rectifier Corporation · US

Inventors

• Kohji Andoh · El Segundo, US
• Davide Chiola · Chino, US

Key dates

• Filing date: Jul 11, 2002
• Grant date: Feb 15, 2005
• Expiry date: Jul 11, 2022

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S438/963

Abstract

A fabrication process for a Schottky barrier structure includes forming a nitride layer directly on a surface of an epitaxial (“epi”) layer and subsequently forming a plurality of trenches in the epi layer. The interior walls of the trenches are then deposited with a final oxide layer without forming a sacrificial oxide layer to avoid formation of a beak bird at the tops of the interior trench walls. A termination trench is etched in the same process step for forming the plurality of trenches in the active area.