Wafer temperature trajectory control method for high temperature ramp rate applications using dynamic predictive thermal modeling
US6855916B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 10, 2003 |
| Grant date | Feb 15, 2005 |
| Priority date | — |
| Expiry date | Dec 10, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67109
- WIPO fieldThermal processes and apparatus
- WIPO sectorMechanical engineering
Abstract
A method for thermally processing a substrate provides a target substrate temperature and generates a move profile of the substrate within a thermal processing system. An amount of heat is provided to the substrate, and one or more temperatures associated with one or more respective locations on the substrate are measured. A predicted temperature profile is further generated, wherein a predicted temperature of the substrate is based on the amount of heat provided and the one or more measured temperatures. The amount of heat provided to the substrate is further regulated, based on the predicted temperature profile, wherein the substrate is thermally processed generally according to the intended substrate temperature profile. The amount of heat provided to the substrate can be further regulated by controlling a position of the substrate within the thermal processing system.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.