Apparatus for inspection with electron beam, method for operating same, and method for manufacturing semiconductor device using former
US6855929B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 2, 2001 |
| Grant date | Feb 15, 2005 |
| Priority date | — |
| Expiry date | May 21, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3025
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A substrate inspection apparatus 1-1 (FIG. 1) of the present invention performs the following steps of: carrying a substrate “S” to be inspected into an inspection chamber 23-1 maintaining a vacuum in said inspection chamber; isolating said inspection chamber from a vibration; moving successively said substrate by means of a stage 26-1 with at least one degree of freedom; irradiating an electron beam having a specified width; helping said electron beam reach to a surface of said substrate via a primary electron optical system 10-1; trapping secondary electrons emitted from said substrate via a secondary electron optical system 20-1 and guiding it to a detecting system 35-1; forming a secondary electron image in an image processing system based on a detection signal of a secondary electron beam obtained by said detecting system; detecting a defective location in said substrate based on the secondary electron image formed by said image processing system; indicating and/or storing said defective location in said substrate by CPU 37-1; and taking said completely inspected substrate out of the inspection chamber. Thereby, the defect inspection on the substrate can be performed successiv…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.