Semiconductor integrated circuit device
US6856019B2 · kind B2 · utility
7Cited by
5References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 9, 2002 |
| Grant date | Feb 15, 2005 |
| Priority date | — |
| Expiry date | Aug 9, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor integrated circuit device has a semiconductor substrate, an interlayer insulating film including SiOF films formed on a main surface of the semiconductor substrate, a wiring groove formed by dry etching of the interlayer insulating film, and a Cu wiring buried in the wiring groove by a Damascene method, wherein a silicon oxynitride film is provided between a silicon nitride film serving as an etching stopper layer for the dry etching and the SiOF film, so that free F generated in the SiOF film is trapped with the silicon oxynitride film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.