Takayuki Oshima
55Patents
8h-index
65Co-inventors
81Inventor score
Filing activity: Dec 23, 1998 → Jun 13, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7553756B2 | Process for producing semiconductor integrated circuit device | Electricity | 203 | Active |
| US6340632B1 | Method of manufacturing a semiconductor device | Electricity | 29 | Expired |
| US6122196A | Semiconductor non-volatile storage device capable of a high speed reading operation | Physics | 27 | Expired |
| US7323781B2 | Semiconductor device and manufacturing method thereof | Electricity | 22 | Expired |
| US6812127B2 | Method of forming semiconductor device including silicon oxide with fluorine, embedded wiring layer, via holes, and wiring grooves | Electricity | 21 | Expired |
| US7501347B2 | Semiconductor device and manufacturing method of the same | Electricity | 18 | Active |
| US6555464B2 | Semiconductor device and method of manufacturing the same | Electricity | 15 | Expired |
| US6480418B2 | Semiconductor non-volatile storage | Physics | 10 | Expired |
| US7411301B2 | Semiconductor integrated circuit device | Electricity | 8 | Expired |
| US7459786B2 | Semiconductor device | Electricity | 8 | Expired |
| US6856019B2 | Semiconductor integrated circuit device | Electricity | 7 | Expired |
| US7023091B2 | Semiconductor integrated circuit device | Electricity | 7 | Expired |
| US8247902B2 | Semiconductor device and manufacturing method of the same | Electricity | 7 | Active |
| US6307780A | Semiconductor non-volatile storage | Physics | 7 | Expired |
| US8586447B2 | Semiconductor device and manufacturing method of the same | Electricity | 6 | Active |
| US9064870B2 | Semiconductor device and manufacturing method thereof | Electricity | 6 | Active |
| US6480518B1 | Synthetic quartz glass member for use in ArF excimer laser lithography | Chemistry; Metallurgy | 5 | Expired |
| US8053893B2 | Semiconductor device and manufacturing method thereof | Electricity | 5 | Active |
| US8431480B2 | Semiconductor device and manufacturing method thereof | Electricity | 4 | Active |
| US8617981B2 | Semiconductor device and manufacturing method thereof | Electricity | 4 | Active |
| US6528400B2 | Method of manufacturing a semiconductor device | Electricity | 4 | Expired |
| US8122405B2 | Delay adjusting method and LSI that uses air-gap wiring | Electricity | 3 | Active |
| US7282434B2 | Method of manufacturing a semiconductor device | Electricity | 3 | Active |
| US9659867B2 | Semiconductor device and manufacturing method thereof | Electricity | 2 | Active |
| US6774020B2 | Semiconductor device and method of manufacturing the same | Electricity | 2 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.