Multiple frequency plasma chamber with grounding capacitor at cathode
US6857387B1 · kind B1 · utility
29Cited by
19References
33Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 3, 2000 |
| Grant date | Feb 22, 2005 |
| Priority date | — |
| Expiry date | May 3, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32165
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An apparatus and method for fabricating an electronic workpiece in which first and second electrodes within a plasma chamber are respectively connected to low frequency and high frequency RF power supplies. At least one capacitor is connected between the first electrode and electrical ground. The one or more capacitors can reduce or eliminate the coupling of high frequency RF power to any plasma outside the region directly between the two electrodes. Consequently, the invention can improve the performance of the plasma process by concentrating more of the RF power in the region between the two electrodes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.