Photoresist compositions for short wavelength imaging
US6858379B2 · kind B2 · utility
7Cited by
3References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 20, 2002 |
| Grant date | Feb 22, 2005 |
| Priority date | — |
| Expiry date | Aug 13, 2022 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S430/108
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
New photoresists are provided that are suitable for short wavelength imaging, including sub-200 nm such as 157 nm. In one aspect, resists of the invention comprise a fluorine-containing polymer, a photoactive component, and one or more additional components of an amine or other basic composition, a dissolution inhibitor compound, a surfactant or leveling agent, or a plasticizer material. In another aspect, resists of the invention contain a fluorine-containing resin and one or more photoacid generator compounds, particularly non-aromatic onium salts and imidosulfonates, and other non-ionic photoacid generator compounds.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.