Method of forming a dual-sided capacitor

US6858493B2 · kind B2 · utility

Assignee

• Micron Technology, Inc. · US

Inventors

• Er-Xuan Ping · Boise, US
• Shenlin Chen · Boise, US

Key dates

• Filing date: May 30, 2003
• Grant date: Feb 22, 2005
• Expiry date: May 30, 2023

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B12/482

Abstract

A dual-sided HSG capacitor and a method of fabrication are disclosed. A thin native oxide layer is formed between a doped polycrystalline layer and a layer of hemispherical grained polysilicon (HSG) as part of a dual-sided lower capacitor electrode. Prior to the dielectric formation, the lower capacitor electrode may be optionally annealed to improve capacitance.