Method for fabrication of MOSFET with buried gate
US6858499B2 · kind B2 · utility
9Cited by
7References
7Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Mar 31, 2003 |
| Grant date | Feb 22, 2005 |
| Priority date | — |
| Expiry date | Sep 2, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/681
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An insulation is formed on a substrate of a material having a first conductivity type. A gate material is formed on the insulation. A portion of the gate material is removed thereby creating forming mesa type gate structures from remaining positions of the gate material. The mesas are then insulated. A channel forming layer, of a material having a second conductivity type, is formed between the produced mesas. Finally, a source of a material having the first conductivity type is formed on the channel forming layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.