Semiconductor processing methods of transferring patterns from patterned photoresists to materials, and structures comprising silicon nitride
US6858523B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 30, 2002 |
| Grant date | Feb 22, 2005 |
| Priority date | — |
| Expiry date | May 30, 2022 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/944
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention includes a semiconductor processing method. A first material comprising silicon and nitrogen is formed. A second material is formed over the first material, and the second material comprises silicon and less nitrogen, by atom percent, than the first material. An imagable material is formed on the second material, and patterned. A pattern is then transferred from the patterned imagable material to the first and second materials. The invention also includes a structure comprising a first layer of silicon nitride over a substrate, and a second layer on the first layer. The second layer comprises silicon and is free of nitrogen. The structure further comprises a third layer consisting essentially of imagable material on the second layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.