Application of carbon doped silicon oxide film to flat panel industry
US6858548B2 · kind B2 · utility
5Cited by
12References
28Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 18, 2002 |
| Grant date | Feb 22, 2005 |
| Priority date | — |
| Expiry date | Jul 1, 2022 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/31663
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A process for depositing a low dielectric constant layer (k<3) on a flat panel display and a flat panel display. The process includes reacting one or more organosilicon compounds with an oxygen containing compound at an RF power level from about 0.345 W/cm2 to about 1.265 W/cm2. The flat panel display includes a plasma display panel having a first substrate, a plurality of barriers deposited on the first substrate, a second substrate, a low dielectric constant layer (k<3) deposited on the second substrate, and a plurality of ground electrodes formed between the barriers and the dielectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.