Nitride semiconductor, method for manufacturing the same and nitride semiconductor device
US6858877B2 · kind B2 · utility
10Cited by
3References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 28, 2003 |
| Grant date | Feb 22, 2005 |
| Priority date | — |
| Expiry date | Mar 5, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/34333
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A facet-forming layer made of nitride semiconductor containing at least aluminum is formed on a substrate made of gallium nitride (GaN). A facet surface inclined with respect to a C-surface is formed on the surface of the facet-forming layer, and a selective growth layer laterally grows from the inclined facet surface. As a result, the selective growth layer can substantially lattice-match an n-type cladding layer made of n-type AlGaN and grown on the selective growth layer. For example, a laser structure without cracks being generated can be obtained by crystal growth.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.