Polishing pads for chemical mechanical planarization
US6860802B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 30, 2000 |
| Grant date | Mar 1, 2005 |
| Priority date | — |
| Expiry date | Jun 30, 2020 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB24D3/28
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
An improved pad and process for polishing metal damascene structures on a semiconductor wafer. The process includes the steps of pressing the wafer against the surface of a polymer sheet in combination with an aqueous-based liquid that optionally contains sub-micron particles and providing a means for relative motion of wafer and polishing pad under pressure so that the moving pressurized contact results in planar removal of the surface of said wafer, wherein the polishing pad has a low elastic recovery when said load is removed, so that the mechanical response of the sheet is largely anelastic. The improved pad is characterized by a high energy dissipation coupled with a high pad stiffness. The pad exhibits a stable morphology that can be reproduced easily and consistently. The pad surface resists glazing, thereby requiring less frequent and less aggressive conditioning. The benefits of such a polishing pad are low dishing of metal features, low oxide erosion, reduced pad conditioning, longer pad life, high metal removal rates, good planarization, and lower defectivity (scratches and Light Point Defects).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.