Reducing shunts in memories with phase-change material

US6861267B2 · kind B2 · utility

Assignee

• Intel Corporation · US

Inventors

• Daniel Xu · Mountain View, US
• Chien Chiang · Merced, US

Key dates

• Filing date: Sep 17, 2001
• Grant date: Mar 1, 2005
• Expiry date: Mar 30, 2023

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N70/8828

Abstract

A memory cell may include a phase-change material. Adhesion between the phase-change material and a dielectric or other substrate may be enhanced by using an adhesion enhancing interfacial layer. Conduction past the phase-change material through the interfacial layer may be reduced by providing a discontinuity or other feature that reduces or prevents conduction along said interfacial layer.