Method for fabricating a trench structure

US6861312B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Albert Birner · Regensburg, DE
• Matthias Goldbach · Dresden, DE
• Joern Luetzen · Dresden, DE

Key dates

• Filing date: Sep 3, 2002
• Grant date: Mar 1, 2005
• Expiry date: Oct 3, 2022

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D1/047
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

An insulation region, for example, an oxide collar, is formed in a trench structure for a DRAM by first widening a first trench region of the trench that is to be formed, in particular, a base region thereof. At least part of the widened region is then provided with a material region for the insulation region.