Method of forming a barrier film and method of forming wiring structure and electrodes of semiconductor device having a barrier film
US6861356B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 22, 2002 |
| Grant date | Mar 1, 2005 |
| Priority date | — |
| Expiry date | Aug 22, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
There is provided a method of forming a barrier metal which is designed to be interposed between a metal layer and an insulating layer, both constituting a multi-layered structure of semiconductor device, the method comprising the steps of positioning a substrate having the insulating layer formed thereon at a predetermined position inside a processing vessel forming a processing space, and alternately introducing a gas containing a refractory metallic atom, a gas containing Si atom and a gas containing N atom into the processing vessel under a predetermined processing pressure, thereby allowing a refractory metal nitride or a refractory metal silicon nitride to be deposited on the insulating layer by way of atomic layer deposition.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.