Self-aligned contact process implementing bias compensation etch endpoint detection and methods for implementing the same
US6861362B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 29, 2001 |
| Grant date | Mar 1, 2005 |
| Priority date | — |
| Expiry date | Jul 17, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76897
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for enhancing the fabrication process of a self-aligned contact (SAC) structure is provided. The method includes forming a transistor structure on a surface of a substrate. The method also includes forming a dielectric layer directly over the surface of the substrate without forming an etch stop layer on the surface of the substrate. Also included in the method is plasma etching a contact hole through the dielectric layer in a plasma processing chamber. The method also includes monitoring a bias compensation voltage of the plasma processing chamber during the plasma etching process and discontinuing the plasma etching process upon detecting an endpoint signaling change in the bias compensation voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.