Schottky diode having overcurrent protection and low reverse current
US6861723B2 · kind B2 · utility
58Cited by
1References
20Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Dec 19, 2003 |
| Grant date | Mar 1, 2005 |
| Priority date | — |
| Expiry date | Dec 19, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8325
Abstract
The invention relates to a Schottky diode in which p-doped regions (4, 5) are incorporated in the Schottky contact area. At least one (5) of these regions (4, 5) has a greater minimum extent, in order to initiate a starting current.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.