Patent · US Expired

Configuration and method for making contact with the back surface of a semiconductor substrate

US6863769B2 · kind B2 · utility

5Cited by

7References

9Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Albert Birner · Regensburg, DE
Martin Franosch · Munich, DE
Matthias Goldbach · Dresden, DE
Volker Lehmann · Hersbruck, DE
Jorn Lutzen · Dresden, DE

Key dates

Filing date	Sep 12, 2003
Grant date	Mar 8, 2005
Priority date	—
Expiry date	Sep 12, 2023

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/0002
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A base body is provided, on which a first sealing ring and a second sealing ring are disposed. A substrate is disposed on the sealing rings in such a way that a cavity is formed between the first sealing ring, the second sealing ring, the base body and the substrate. An etching substance can be introduced into the cavity in order to etch clear a conductive layer that has been applied to the substrate. When a conductive layer that has been applied to the substrate back surface has been uncovered, an electrolyte can be introduced into the cavity, making contact with the conductive layer and therefore the substrate back surface.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.