Patent · US Expired

Method for fabricating integrated circuit arrangements, and associated circuit arrangements, in particular tunnel contact elements

US6864175B2 · kind B2 · utility

5Cited by

5References

13Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Manfred Engelhardt · Feldkirchen-Westerham, DE
Stefan Wurm · Austin, US

Key dates

Filing date	Sep 20, 2001
Grant date	Mar 8, 2005
Priority date	—
Expiry date	Feb 26, 2023

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY10T428/12438
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

The invention relates to a method in which an eclectically nonconductive mask layer is applied to an electrically conductive contact layer which is supported by a substrate layer. A free space is made in the mask layer. Then, a plurality of layers are electrochemically deposited in the free space. Then, layers are applied above the layer which was deposited last. Then, in a removal process, the mask layer is removed down to the height of the top layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.