Method for reworking low-k polymers used in semiconductor structures
US6864180B2 · kind B2 · utility
0Cited by
11References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 2, 2001 |
| Grant date | Mar 8, 2005 |
| Priority date | — |
| Expiry date | Sep 2, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31111
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for removing a dielectric layer formed upon a semiconductor substrate is disclosed. In an exemplary embodiment of the invention, the method includes subjecting the dielectric layer to a dry etch process and subjecting an adhesion promoter layer underneath the dielectric layer to a wet etch process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.