Method of producing large-area membrane masks by dry etching

US6864182B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Jörg Butschke · Stuttgart, DE
• Albrecht Ehrmann · Aalen, DE
• Karl Kragler · Erlangen, DE
• Florian Letzkus · Bingen, DE
• Christian Reuter · Kirchheim unter Teck, DE
• Reinhard Springer · Sulz, DE

Key dates

• Filing date: Jun 28, 2002
• Grant date: Mar 8, 2005
• Expiry date: May 31, 2023

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S438/942
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

Based upon an existing or to be produced multi-layered semiconductor-insulator-semiconductor carrier layer wafer (SOI substrate), irregularity of the etching conditions between the center and the edge region occurring during dry etching can be counteracted by a number of alternative steps, in particular, an additional layer construction compensating for the etching irregularity so that in any event an approximately homogeneous etching removal takes place over the entire area of the wafer to be etched.