Fine line printing by trimming the sidewalls of pre-developed resist image
US6864185B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 18, 2003 |
| Grant date | Mar 8, 2005 |
| Priority date | — |
| Expiry date | Aug 18, 2023 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/203
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method of forming a feature pattern in a photosensitive layer includes forming the photosensitive layer on a substrate, providing a first mask having a first opaque area thereon, and performing a first exposure process with a first dose to form a first unexposed image in the photosensitive layer. The method further includes performing a second exposure process with a second dose to expose sidewalls of the first unexposed image so that the sidewalls of the first unexposed image receive at least a portion of the second dose thus forming a second unexposed image in the photosensitive layer, and developing the photosensitive layer with a developing process to form the feature pattern and to create features having smaller widths than those which would result in developing the photosensitive layer of the first unexposed image.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.