High density and high programming efficiency MRAM design
US6864551B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jun 26, 2003 |
| Grant date | Mar 8, 2005 |
| Priority date | — |
| Expiry date | Jun 26, 2023 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB82Y10/00
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A method and system for providing a magnetic memory is disclosed. The magnetic memory includes a magnetic element. The magnetic element is written using a first write line and a second write line and resides at an intersection between the first and second write lines. The second write line is oriented at an angle to the first write line. The second write line has a top and at least one side. At least a portion of the second write line is covered by an insulating layer. A magnetic layer covers a portion of the insulating layer. The portion of the insulating layer resides between the magnetic layer and the second write line. The magnetic layer includes a soft magnetic material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.