Fabrication of a FeRAM capacitor using a noble metal hardmask
US6867053B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 28, 2003 |
| Grant date | Mar 15, 2005 |
| Priority date | — |
| Expiry date | Jul 28, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/694
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A ferroelectric capacitor is fabricated using a noble metal hardmask. A hardmask is deposited on a top electrode of a capacitor stack comprising a ferroelectric layer sandwiched between the top electrode and a bottom electrode. The top electrode is patterned according to the pattern of the hardmask by etching at a first temperature. The top electrode serves as the noble metal hardmask and the ferroelectric layer is patterned according to the pattern of the top electrode at a second temperature lower than the first temperature, resulting in the top electrode having sidewalls beveled relative to a top surface of the top electrode etching. The bottom electrode is etched at a third temperature to form the capacitor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.