Multi-step deposition and etch back gap fill process
US6867086B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 13, 2003 |
| Grant date | Mar 15, 2005 |
| Priority date | — |
| Expiry date | Mar 13, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
High density plasma chemical vapor deposition and etch back processes that can fill high aspect ratio (typically at least 5:1, for example 6:1), narrow width (typically sub 0.13 micron, for example 0.1 micron or less) gaps with significantly reduced incidence of voids or weak spots are provided. This deposition part of the process may involve the use of any suitable high density plasma chemical vapor deposition (HDP CVD) chemistry. The etch back part of the process involves an integrated multi-step (for example, two-step) procedure including an anisotropic dry etch followed by an isotropic dry etch. The all dry deposition and etch back process in a single tool increases throughput and reduces handling of wafers resulting in more efficient and higher quality gap fill operations.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.