Method for fabricating semiconductor device using photoresist pattern formed with argon fluoride laser
US6867145B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 17, 2002 |
| Grant date | Mar 15, 2005 |
| Priority date | — |
| Expiry date | Sep 4, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76831
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a method for fabricating a semiconductor device with use of an ArF light source capable of minimizing deformations of a photoresist pattern for ArF during an etching process. Also, when forming the pattern, C5F8 gas is used at a main etching step to compensate etch tolerance of the photoresist for ArF. By controlling process recipe properly, it is possible to minimize pattern deformations as simultaneously as to form a micronized pattern. To compensate the etch tolerance of the photoresist for ArF weaker than that of a photoresist for KrF, the main etching step is divided into three sub-steps, thereby providing a method for minimizing the pattern deformations when duplicating the pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.