Sung-Kwon Lee
71Patents
9h-index
50Co-inventors
77Inventor score
Filing activity: Nov 6, 2000 → Jan 23, 2017
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6972262B2 | Method for fabricating semiconductor device with improved tolerance to wet cleaning process | Emerging Cross-Sectional Technologies | 20 | Expired |
| US7365000B2 | Method for fabricating semiconductor device | Electricity | 18 | Expired |
| US7196004B2 | Method and fabricating semiconductor device | Electricity | 18 | Expired |
| US7122467B2 | Method for fabricating semiconductor device | Emerging Cross-Sectional Technologies | 17 | Expired |
| US7037850B2 | Method for fabricating semiconductor device with fine patterns | Electricity | 17 | Expired |
| US6995056B2 | Method for fabricating semiconductor device capable of preventing damage by wet cleaning process | Electricity | 17 | Expired |
| US6589828B2 | Fabricating a thin film transistor having better punch through resistance and hot carrier effects | Electricity | 13 | Expired |
| US6784084B2 | Method for fabricating semiconductor device capable of reducing seam generations | Emerging Cross-Sectional Technologies | 10 | Expired |
| US6569778B2 | Method for forming fine pattern in semiconductor device | Electricity | 9 | Expired |
| US8012881B1 | Method for forming contact holes in semiconductor device | Electricity | 9 | Active |
| US7314792B2 | Method for fabricating transistor of semiconductor device | Electricity | 8 | Active |
| US6906558B2 | Data latch circuit and method for improving operating speed in a data latch circuit | Electricity | 8 | Expired |
| US6897159B1 | Method for fabricating semiconductor device | Electricity | 8 | Expired |
| US7179744B2 | Method for fabricating semiconductor device | Electricity | 7 | Expired |
| US6764893B2 | Method for reducing a parasitic capacitance of a semiconductive memory cell using metal mask for sidewall formation | Electricity | 7 | Expired |
| US6852592B2 | Methods for fabricating semiconductor devices | Electricity | 6 | Expired |
| US7442648B2 | Method for fabricating semiconductor device using tungsten as sacrificial hard mask | Electricity | 6 | Expired |
| US6800522B2 | Method for fabricating semiconductor device with storage node contact structure | Electricity | 6 | Expired |
| US6933236B2 | Method for forming pattern using argon fluoride photolithography | Emerging Cross-Sectional Technologies | 5 | Expired |
| US7125496B2 | Etching method using photoresist etch barrier | Electricity | 5 | Expired |
| US8846540B2 | Semiconductor device with silicon-containing hard mask and method for fabricating the same | Electricity | 5 | Active |
| US7018930B2 | Method for fabricating semiconductor device | Electricity | 5 | Expired |
| US6784051B2 | Method for fabricating semiconductor device | Electricity | 5 | Expired |
| US6903428B2 | Semiconductor device capable of preventing a pattern collapse | Electricity | 5 | Expired |
| US6867145B2 | Method for fabricating semiconductor device using photoresist pattern formed with argon fluoride laser | Electricity | 5 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.