Surface-functionalized inorganic semiconductor particles as electrical semiconductors for microelectronics applications

US6867442B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Marcus Halik · Erlangen, DE
• Günter Schmid · Hemhofen, DE
• Katja Steffen · Dresden, DE
• Hagen Klauk · Erlangen, DE

Key dates

• Filing date: Apr 29, 2003
• Grant date: Mar 15, 2005
• Expiry date: Apr 29, 2023

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10K85/40

Abstract

A semiconductor device has a first contact, by which charge carriers are injected into a semiconductor path, and a second contact, by which the charge carriers are extracted from the semiconductor path. The semiconductor path is formed by surface-modified semiconductor particles that bear alkyl or aryl ligands at their surface. The modification with ligands enables the semiconductor particles to form a stable dispersion that can easily be applied to a substrate with a printing technique. Consequently, the semiconductor device according to the invention can be produced very easily and inexpensively.