Method and apparatus for detecting contaminants in ion-implanted wafer
US6869215B2 · kind B2 · utility
1Cited by
5References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 29, 2003 |
| Grant date | Mar 22, 2005 |
| Priority date | — |
| Expiry date | May 29, 2023 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N25/72
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method and apparatus for detecting contaminants in an ion-implanted wafer by annealing and activating the ion-implanted wafer by heating or charging or both, and measuring the thermal wave absorbance generated from the activated wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.