Process and apparatus for treating a workpiece such as a semiconductor wafer
US6869487B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Jul 21, 2000 |
| Grant date | Mar 22, 2005 |
| Priority date | — |
| Expiry date | Dec 3, 2020 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S134/902
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A novel chemistry, system and application technique reduces contamination of semiconductor wafers and similar substrates and enhances and expedites processing. A stream of liquid chemical is applied to the workpiece surface. Ozone is delivered either into the liquid process stream or into the process environment. The ozone is preferably generated by a high capacity ozone generator. The chemical stream is provided in the form of a liquid or vapor. A boundary layer liquid or vapor forms on the workpiece surface. The thickness of the boundary layer is controlled. The chemical stream may include ammonium hydroxide for simultaneous particle and organic removal, another chemical to raise the pH of the solution, or other chemical additives designed to accomplish one or more specific cleaning steps.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.