Source reagent compositions for CVD formation of gate dielectric thin films using amide precursors and method of using same
US6869638B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 18, 2001 |
| Grant date | Mar 22, 2005 |
| Priority date | — |
| Expiry date | Feb 19, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/693
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A CVD Method of forming gate dielectric thin films on a substrate using metalloamide compounds of the formula M(NR1R2)x, or wherein M is Zr, Hf, Y, La, Lanthanide series elements, Ta, Ti, or Al; N is nitrogen; each of R1 and R2 is same or different and is independently selected from H, aryl, perfluoroaryl, C1-C8 alkyl, C1-C8 perfluoroalkyl, alkylsilyl; and x is the oxidation state on metal M; and an aminosilane compound of the formula HxSiAy(NR1R2)4-x-y or wherein H is hydrogen; x is from 0 to 3; Si is silicon; A is a halogen; Y is from 0 to 3; N is nitrogen; each of R1 and R2 is same or different and is independently selected from the group consisting of H, aryl, perfluoroaryl, C1-C8 alkyl, and C1-C8 perfluoroalkyl; and n is from 1-6. By comparison with the standard SiO2 gate dielectric materials, these gate dielectric materials provide low levels of carbon and halide impurity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.