Copper silicide passivation for improved reliability
US6869873B2 · kind B2 · utility
16Cited by
12References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 30, 2003 |
| Grant date | Mar 22, 2005 |
| Priority date | — |
| Expiry date | Jun 30, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A silane passivation process, carried out in-situ together with the formation of a subsequent dielectric film, converts the exposed Cu surfaces of a Cu interconnect structure, to copper silicide. The copper silicide suppresses Cu diffusion and electromigration and serves as a barrier material in regions where contact to further conductive material is made. An entire copper surface of a copper interconnect structure may be silicided or a local portion of the surface silicided after an opening is formed in an overlying dielectric to expose a portion of the copper surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.