Method for fabricating contact plug with low contact resistance
US6869874B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 30, 2002 |
| Grant date | Mar 22, 2005 |
| Priority date | — |
| Expiry date | Dec 30, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76897
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a method for forming a contact plug of a semiconductor device with a low contact resistance. The inventive method includes the steps of: forming a contact hole in an inter-layer insulating layer formed on a silicon substrate; removing a native oxide layer formed in the contact hole; forming a single crystal silicon layer on a surface of the silicon substrate in the contact hole, wherein the single crystal silicon layer is formed by an epitaxial growth performed at a first reaction chamber of which pressure is maintained less than approximately 10−6 Torr; and filling the contact hole with polysilicon, wherein the polysilicon layer is formed at a second reaction chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.