In situ application of etch back for improved deposition into high-aspect-ratio features

US6869880B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Padmanabhan Krishnaraj · San Francisco, US
• Pavel Ionov · Los Angeles, US
• Canfeng Lai · Fremont, US
• Michael S. Cox · Gilroy, US
• Shamouil Shamouilian · San Jose, US

Key dates

• Filing date: Jan 24, 2002
• Grant date: Mar 22, 2005
• Expiry date: Sep 21, 2022

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/02274
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

A continuous in situ process of deposition, etching, and deposition is provided for forming a film on a substrate using a plasma process. The etch-back may be performed without separate plasma activation of the etchant gas. The sequence of deposition, etching, and deposition permits features with high aspect ratios to be filled, while the continuity of the process results in improved uniformity.