Canfeng Lai
33Patents
11h-index
84Co-inventors
78Inventor score
Filing activity: Mar 26, 1997 → Mar 15, 2021
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6863019B2 | Semiconductor device fabrication chamber cleaning method and apparatus with recirculation of cleaning gas | Emerging Cross-Sectional Technologies | 549 | Expired |
| US6450117B1 | Directing a flow of gas in a substrate processing chamber | Emerging Cross-Sectional Technologies | 490 | Expired |
| US6447651B1 | High-permeability magnetic shield for improved process uniformity in nonmagnetized plasma process chambers | Chemistry; Metallurgy | 471 | Expired |
| US6869880B2 | In situ application of etch back for improved deposition into high-aspect-ratio features | Electricity | 232 | Expired |
| US6418874B1 | Toroidal plasma source for plasma processing | Electricity | 203 | Expired |
| US6755150B2 | Multi-core transformer plasma source | Electricity | 39 | Expired |
| US6364958B1 | Plasma assisted semiconductor substrate processing chamber having a plurality of ground path bridges | Electricity | 36 | Expired |
| US7363876B2 | Multi-core transformer plasma source | Electricity | 27 | Expired |
| US6841006B2 | Atmospheric substrate processing apparatus for depositing multiple layers on a substrate | Emerging Cross-Sectional Technologies | 22 | Expired |
| US6894474B2 | Non-intrusive plasma probe | Electricity | 17 | Expired |
| US5835335A | Unbalanced bipolar electrostatic chuck power supplies and methods thereof | Emerging Cross-Sectional Technologies | 13 | Expired |
| US6682603B2 | Substrate support with extended radio frequency electrode upper surface | Electricity | 10 | Expired |
| US10699878B2 | Chamber member of a plasma source and pedestal with radially outward positioned lift pins for translation of a substrate c-ring | Electricity | 9 | Active |
| US6712020B2 | Toroidal plasma source for plasma processing | Electricity | 7 | Expired |
| US7651587B2 | Two-piece dome with separate RF coils for inductively coupled plasma reactors | Electricity | 6 | Expired |
| US7572647B2 | Internal balanced coil for inductively coupled high density plasma processing chamber | Electricity | 5 | Active |
| US7789993B2 | Internal balanced coil for inductively coupled high density plasma processing chamber | Electricity | 5 | Active |
| US7588036B2 | Chamber clean method using remote and in situ plasma cleaning systems | Emerging Cross-Sectional Technologies | 3 | Expired |
| US7571698B2 | Low-frequency bias power in HDP-CVD processes | Electricity | 2 | Active |
| US7659184B2 | Plasma immersion ion implantation process with chamber seasoning and seasoning layer plasma discharging for wafer dechucking | Electricity | 2 | Active |
| US7399707B2 | In situ application of etch back for improved deposition into high-aspect-ratio features | Electricity | 2 | Expired |
| US9048190B2 | Methods and apparatus for processing substrates using an ion shield | Electricity | 2 | Active |
| US10529541B2 | Inductive plasma source with metallic shower head using B-field concentrator | Electricity | 2 | Active |
| US11699571B2 | Semiconductor processing chambers for deposition and etch | Electricity | 1 | Active |
| US8317970B2 | Ceiling electrode with process gas dispersers housing plural inductive RF power applicators extending into the plasma | Electricity | 1 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.