Laminate low K film
US6869893B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 21, 2002 |
| Grant date | Mar 22, 2005 |
| Priority date | — |
| Expiry date | Nov 27, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/022
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Application of an extremely low K material by the application of a laminate onto a wafer. The laminate preferably contains alternating layers of low K material and etch stop layers, and could be applied by rolling the laminate onto the wafer. An anneal process can be utilized to bond the film to the wafer. Conventional photo masking and etching techniques are then used to open vias and line areas in the film, and to deposit the next copper layer on the wafer. Electro polishing can be used to planarize or remove residual copper. Thereafter, an etch step can be performed to remove the excess material between the copper lines to leave an ultra low K region between the copper lines. The next layer of low K film can then be deposited, and the process repeated for all subsequent metal layering.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.