Semiconductor memory and its production process
US6870215B2 · kind B2 · utility
65Cited by
18References
22Claims
0Family size
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Key dates
| Filing date | Jun 20, 2002 |
| Grant date | Mar 22, 2005 |
| Priority date | — |
| Expiry date | Jul 11, 2022 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/0483
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A semiconductor memory comprises: a first conductivity type semiconductor substrate and memory cells each constituted of an island-like semiconductor layer, a charge storage layer and a control gate, the charge storage layer and the control gate being formed to entirely or partially encircle a sidewall of the island-like semiconductor layer, wherein the memory cells are disposed in series, and the island-like semiconductor layer on which the memory cells are disposed has cross-sectional areas in a horizontal direction which vary stepwise.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.