MOS transistor apparatus and method of manufacturing same
US6870224B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 15, 2003 |
| Grant date | Mar 22, 2005 |
| Priority date | — |
| Expiry date | Aug 15, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0181
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
When polycrystalline silicon germanium film is used for gate electrodes in a MOS transistor apparatus, there have been problems of reduced reliability in the gate insulating film, due to stress in the silicon germanium grains. Therefore, a polysilicon germanium film is formed, after forming silicon fine particles of particle size 10 nm or less on an oxide film. As a result, it is possible to achieve a high-speed MOS transistor apparatus using an ultra-thin oxide film having a film thickness of 1.5 nm or less, wherein the Ge concentration of the polycrystalline silicon germanium at its interface with the oxide film is uniform, thereby reducing the stress in the film, and improving the reliability of the gate electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.