Semiconductor device and method of manufacturing same
US6870226B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 12, 2003 |
| Grant date | Mar 22, 2005 |
| Priority date | — |
| Expiry date | Sep 15, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6758
Abstract
There is provided a semiconductor device which is formed on a semiconductor substrate and allows effective use of the feature of the semiconductor substrate, and there is also provided a method of manufacturing the same. An N-channel MOS transistor including a P-type body layer (3a), and a P-type active layer (6) for body voltage application which is in contact with the P-type body layer (3a) are formed on an SOI substrate which is formed to align a <110> crystal direction of a support substrate (1) with a <100> crystal direction of an SOI layer (3). A path connecting the P-type body layer (3a) and the P-type active layer (6) for body voltage application is aligned parallel to the <100> crystal direction of the SOI layer (3). Since hole mobility is higher in the <100> crystal direction, parasitic resistance (Ra, Rb) can be reduced in the above path. This speeds up voltage transmission to the P-type body layer (3a) and improves voltage fixing capability in the P-type body layer (3a).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.