Double layer spacer for antiparallel pinned layer in CIP/CPP GMR and MTJ devices
US6870711B1 · kind B1 · utility
9Cited by
8References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 8, 2004 |
| Grant date | Mar 22, 2005 |
| Priority date | — |
| Expiry date | Jun 8, 2024 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49044
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A pinned/pinning layer configuration of the form: AP1/coupling bilayer/AP2/AFM, suitable for use in a CIP or CPP GMR sensor, a TMR sensor or an MRAM element, is found to have improved magnetic stability, yield good values of dR/R and have high values of saturation magnetization that can be adjusted to meet the requirements of magnetic field annealing. The coupling bilayer is a layer of Ru/Rh or their alloys, which provides a wide range of coupling strengths by varying either the thickness of the Ru layer or the Rh layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.