Hui-Chuan Wang
73Patents
14h-index
36Co-inventors
84Inventor score
Filing activity: Dec 5, 1997 → Jan 5, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7602033B2 | Low resistance tunneling magnetoresistive sensor with composite inner pinned layer | Electricity | 71 | Active |
| US6322640A | Multiple thermal annealing method for forming antiferromagnetic exchange biased magnetoresistive (MR) sensor element | Emerging Cross-Sectional Technologies | 43 | Expired |
| US8059374B2 | TMR device with novel free layer structure | Electricity | 30 | Active |
| US7528457B2 | Method to form a nonmagnetic cap for the NiFe(free) MTJ stack to enhance dR/R | Electricity | 30 | Active |
| US6449131B2 | Canted longitudinal patterned exchange biased dual-stripe magnetoresistive (DSMR) sensor element and method for fabrication thereof | Emerging Cross-Sectional Technologies | 29 | Expired |
| US7476954B2 | TMR device with Hf based seed layer | Emerging Cross-Sectional Technologies | 27 | Active |
| US6129957A | Method of forming a second antiferromagnetic exchange-coupling layer for magnetoresistive (MR) and giant MR (GMR) applications | Emerging Cross-Sectional Technologies | 26 | Expired |
| US6024886A | Planarizing method for fabricating an inductive magnetic write head for high density magnetic recording | Emerging Cross-Sectional Technologies | 25 | Expired |
| US7333306B2 | Magnetoresistive spin valve sensor with tri-layer free layer | Emerging Cross-Sectional Technologies | 24 | Active |
| US8164862B2 | Seed layer for TMR or CPP-GMR sensor | Electricity | 22 | Active |
| US7780820B2 | Low resistance tunneling magnetoresistive sensor with natural oxidized double MgO barrier | Emerging Cross-Sectional Technologies | 19 | Active |
| US7672088B2 | Heusler alloy with insertion layer to reduce the ordering temperature for CPP, TMR, MRAM, and other spintronics applications | Electricity | 16 | Active |
| US8259420B2 | TMR device with novel free layer structure | Emerging Cross-Sectional Technologies | 14 | Active |
| US8202572B2 | TMR device with improved MgO barrier | Electricity | 14 | Active |
| US6785954B2 | Method for fabricating lead overlay (LOL) on the bottom spin valve GMR read sensor | Emerging Cross-Sectional Technologies | 13 | Expired |
| US7564658B2 | CoFe insertion for exchange bias and sensor improvement | Physics | 13 | Expired |
| US8472151B2 | TMR device with low magnetorestriction free layer | Emerging Cross-Sectional Technologies | 12 | Active |
| US9040178B2 | TMR device with novel free layer structure | Emerging Cross-Sectional Technologies | 11 | Active |
| US7978439B2 | TMR or CPP structure with improved exchange properties | Emerging Cross-Sectional Technologies | 11 | Active |
| US8557407B2 | Low resistance tunneling magnetoresistive sensor with natural oxidized double MgO barrier | Emerging Cross-Sectional Technologies | 10 | Active |
| US6310751A | Anti-parallel longitudinal patterned exchange biased dual stripe magnetoresistive (DSMR) sensor element and method for fabrication thereof | Physics | 10 | Expired |
| US6870711B1 | Double layer spacer for antiparallel pinned layer in CIP/CPP GMR and MTJ devices | Emerging Cross-Sectional Technologies | 9 | Expired |
| US7829963B2 | TMR device with Hf based seed layer | Emerging Cross-Sectional Technologies | 9 | Active |
| US7646568B2 | Ultra thin seed layer for CPP or TMR structure | Emerging Cross-Sectional Technologies | 9 | Active |
| US8008740B2 | Low resistance tunneling magnetoresistive sensor with composite inner pinned layer | Electricity | 9 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.