Re-writable memory with non-linear memory element
US6870755B2 · kind B2 · utility
85Cited by
6References
18Claims
0Family size
Assignee
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Key dates
| Filing date | Jul 30, 2003 |
| Grant date | Mar 22, 2005 |
| Priority date | — |
| Expiry date | Aug 27, 2023 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/77
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A re-writable memory that uses resistive memory cell elements with non-linear IV characteristics is disclosed. Non-linearity is important in certain memory arrays to prevent unselected cells from being disturbed and to reduce the required current. Non-linearity refers to the ability of the element to block the majority of current up to a certain level, but then, once that level is reached, the element allows the majority of the current over and above that level to flow.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.